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  • Artigo de periodico

    Tight-binding model for carbon nanotubes from ab initio calculations (2010)

    Correa, J D; Silva, Antonio Jose Roque da ; Pacheco, M

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, NANOPARTÍCULAS

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      CORREA, J D e SILVA, Antonio Jose Roque da e PACHECO, M. Tight-binding model for carbon nanotubes from ab initio calculations. Journal of Physics-Condensed Matter, v. 22, n. 27, p. 275503/1-275503/8, 2010Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/22/27/275503. Acesso em: 14 maio 2024.

    • APA

      Correa, J. D., Silva, A. J. R. da, & Pacheco, M. (2010). Tight-binding model for carbon nanotubes from ab initio calculations. Journal of Physics-Condensed Matter, 22( 27), 275503/1-275503/8. doi:https://doi.org/10.1088/0953-8984/22/27/275503

    • NLM

      Correa JD, Silva AJR da, Pacheco M. Tight-binding model for carbon nanotubes from ab initio calculations [Internet]. Journal of Physics-Condensed Matter. 2010 ; 22( 27): 275503/1-275503/8.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/22/27/275503

    • Vancouver

      Correa JD, Silva AJR da, Pacheco M. Tight-binding model for carbon nanotubes from ab initio calculations [Internet]. Journal of Physics-Condensed Matter. 2010 ; 22( 27): 275503/1-275503/8.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/22/27/275503

  • Artigo de periodico

    Electric field gradients in `ANTPOT.111 In´-doped `(Hf/Zr) IND. 3´`Al IND.2´ and `(Hf/Zr) IND.4´`Al IND.3´ mixed compounds: ab initio calculations, perturbed angular correlation measurements and site preference (2010)

    Errico, Leonardo Antonio ; Petrilli, Helena Maria; Terrazos, L A; Kulínska, A; Wodniecki, P; Lieb, K P; Uhrmacher, M; Belosevic-Cavor, J; Koteski, V

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Assunto: INTERAÇÕES NUCLEARES

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      ERRICO, Leonardo Antonio et al. Electric field gradients in `ANTPOT.111 In´-doped `(Hf/Zr) IND. 3´`Al IND.2´ and `(Hf/Zr) IND.4´`Al IND.3´ mixed compounds: ab initio calculations, perturbed angular correlation measurements and site preference. Journal of Physics-Condensed Matter, v. 22, n. 21, p. 215501/1-215501/11, 2010Tradução . . Disponível em: http://iopscience.iop.org/0953-8984/22/21/215501/pdf/0953-8984_22_21_215501.pdf. Acesso em: 14 maio 2024.

    • APA

      Errico, L. A., Petrilli, H. M., Terrazos, L. A., Kulínska, A., Wodniecki, P., Lieb, K. P., et al. (2010). Electric field gradients in `ANTPOT.111 In´-doped `(Hf/Zr) IND. 3´`Al IND.2´ and `(Hf/Zr) IND.4´`Al IND.3´ mixed compounds: ab initio calculations, perturbed angular correlation measurements and site preference. Journal of Physics-Condensed Matter, 22( 21), 215501/1-215501/11. Recuperado de http://iopscience.iop.org/0953-8984/22/21/215501/pdf/0953-8984_22_21_215501.pdf

    • NLM

      Errico LA, Petrilli HM, Terrazos LA, Kulínska A, Wodniecki P, Lieb KP, Uhrmacher M, Belosevic-Cavor J, Koteski V. Electric field gradients in `ANTPOT.111 In´-doped `(Hf/Zr) IND. 3´`Al IND.2´ and `(Hf/Zr) IND.4´`Al IND.3´ mixed compounds: ab initio calculations, perturbed angular correlation measurements and site preference [Internet]. Journal of Physics-Condensed Matter. 2010 ; 22( 21): 215501/1-215501/11.[citado 2024 maio 14 ] Available from: http://iopscience.iop.org/0953-8984/22/21/215501/pdf/0953-8984_22_21_215501.pdf

    • Vancouver

      Errico LA, Petrilli HM, Terrazos LA, Kulínska A, Wodniecki P, Lieb KP, Uhrmacher M, Belosevic-Cavor J, Koteski V. Electric field gradients in `ANTPOT.111 In´-doped `(Hf/Zr) IND. 3´`Al IND.2´ and `(Hf/Zr) IND.4´`Al IND.3´ mixed compounds: ab initio calculations, perturbed angular correlation measurements and site preference [Internet]. Journal of Physics-Condensed Matter. 2010 ; 22( 21): 215501/1-215501/11.[citado 2024 maio 14 ] Available from: http://iopscience.iop.org/0953-8984/22/21/215501/pdf/0953-8984_22_21_215501.pdf

  • Artigo de periodico

    Crystal engineering using functionalized adamantane (2010)

    Garcia, Joelson Cott; Assali, L. V. C. ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco

    Source: Journal of Physics-Condensed Matter. Unidades: IF, EP

    Subjects: ESTRUTURA ELETRÔNICA, CRISTALOGRAFIA, NANOCOMPOSITOS

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      GARCIA, Joelson Cott et al. Crystal engineering using functionalized adamantane. Journal of Physics-Condensed Matter, v. 22, n. 31, p. 315303/1-315303/6, 2010Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/22/31/315303. Acesso em: 14 maio 2024.

    • APA

      Garcia, J. C., Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2010). Crystal engineering using functionalized adamantane. Journal of Physics-Condensed Matter, 22( 31), 315303/1-315303/6. doi:10.1088/0953-8984/22/31/315303

    • NLM

      Garcia JC, Assali LVC, Machado WVM, Justo Filho JF. Crystal engineering using functionalized adamantane [Internet]. Journal of Physics-Condensed Matter. 2010 ; 22( 31): 315303/1-315303/6.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/22/31/315303

    • Vancouver

      Garcia JC, Assali LVC, Machado WVM, Justo Filho JF. Crystal engineering using functionalized adamantane [Internet]. Journal of Physics-Condensed Matter. 2010 ; 22( 31): 315303/1-315303/6.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/22/31/315303

  • Artigo de periodico

    Theoretical investigation of Hf and Zr defects in c-Ge (2009)

    Scopel, Wanderla Luis; Fazzio, Adalberto; Silva, Antonio Jose Roque da

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Assunto: ESPECTROSCOPIA

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      SCOPEL, Wanderla Luis e FAZZIO, Adalberto e SILVA, Antonio Jose Roque da. Theoretical investigation of Hf and Zr defects in c-Ge. Journal of Physics-Condensed Matter, v. 21, n. 1, p. 012206/1-012206/3, 2009Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/21/1/012206. Acesso em: 14 maio 2024.

    • APA

      Scopel, W. L., Fazzio, A., & Silva, A. J. R. da. (2009). Theoretical investigation of Hf and Zr defects in c-Ge. Journal of Physics-Condensed Matter, 21( 1), 012206/1-012206/3. doi:10.1088/0953-8984/21/1/012206

    • NLM

      Scopel WL, Fazzio A, Silva AJR da. Theoretical investigation of Hf and Zr defects in c-Ge [Internet]. Journal of Physics-Condensed Matter. 2009 ; 21( 1): 012206/1-012206/3.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/21/1/012206

    • Vancouver

      Scopel WL, Fazzio A, Silva AJR da. Theoretical investigation of Hf and Zr defects in c-Ge [Internet]. Journal of Physics-Condensed Matter. 2009 ; 21( 1): 012206/1-012206/3.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/21/1/012206

  • Artigo de periodico

    Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells (2009)

    Morais, R R O; Dias, I F L; Silva, M A T da; Cesar, D F; Duarte, J L; Lourenço, S A; Laureto, E; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA

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      MORAIS, R R O et al. Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells. Journal of Physics-Condensed Matter, v. 21, n. 15, p. 155601/1-155601/7, 2009Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf. Acesso em: 14 maio 2024.

    • APA

      Morais, R. R. O., Dias, I. F. L., Silva, M. A. T. da, Cesar, D. F., Duarte, J. L., Lourenço, S. A., et al. (2009). Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells. Journal of Physics-Condensed Matter, 21( 15), 155601/1-155601/7. Recuperado de https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf

    • NLM

      Morais RRO, Dias IFL, Silva MAT da, Cesar DF, Duarte JL, Lourenço SA, Laureto E, Silva ECF da, Quivy AA. Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells [Internet]. Journal of Physics-Condensed Matter. 2009 ; 21( 15): 155601/1-155601/7.[citado 2024 maio 14 ] Available from: https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf

    • Vancouver

      Morais RRO, Dias IFL, Silva MAT da, Cesar DF, Duarte JL, Lourenço SA, Laureto E, Silva ECF da, Quivy AA. Effects of confinement on the electron-phonon interaction in `Al IND.0.18´`Ga IND.0.82´As/GaAs quantum wells [Internet]. Journal of Physics-Condensed Matter. 2009 ; 21( 15): 155601/1-155601/7.[citado 2024 maio 14 ] Available from: https://repositorio.usp.br/directbitstream/89a955fe-df31-4137-bc37-638f06d87904/1-s2.0-0921452695006508-main.pdf

  • Artigo de periodico

    Furan interaction with the Si(001)-(2 × 2) surface: structural, energetics, and vibrational spectra from first-principles (2009)

    Miotto, R; Ferraz, A. C.

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Subjects: QUÍMICA DE SUPERFÍCIE, ADSORÇÃO

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      MIOTTO, R e FERRAZ, A. C. Furan interaction with the Si(001)-(2 × 2) surface: structural, energetics, and vibrational spectra from first-principles. Journal of Physics-Condensed Matter, v. 21, n. 5, p. 055006/1-055006/6, 2009Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/21/5/055006. Acesso em: 14 maio 2024.

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      Miotto, R., & Ferraz, A. C. (2009). Furan interaction with the Si(001)-(2 × 2) surface: structural, energetics, and vibrational spectra from first-principles. Journal of Physics-Condensed Matter, 21( 5), 055006/1-055006/6. doi:10.1088/0953-8984/21/5/055006

    • NLM

      Miotto R, Ferraz AC. Furan interaction with the Si(001)-(2 × 2) surface: structural, energetics, and vibrational spectra from first-principles [Internet]. Journal of Physics-Condensed Matter. 2009 ; 21( 5): 055006/1-055006/6.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/21/5/055006

    • Vancouver

      Miotto R, Ferraz AC. Furan interaction with the Si(001)-(2 × 2) surface: structural, energetics, and vibrational spectra from first-principles [Internet]. Journal of Physics-Condensed Matter. 2009 ; 21( 5): 055006/1-055006/6.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/21/5/055006

  • Artigo de periodico

    Synthesis and magnetic characterization of of Tm`Co IND.2´`B IND.2´C (2009)

    ElMassalami, M; Rapp, R E; Chaves, F A B; Moreno, R; Takeya, H; Ouladdiaf, B; Lynn, J W; Huang, Q; Freitas, Rafael Sá de; Oliveira Jr., N. F.

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Subjects: SUPERCONDUTIVIDADE, TERRAS RARAS

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      ELMASSALAMI, M et al. Synthesis and magnetic characterization of of Tm`Co IND.2´`B IND.2´C. Journal of Physics-Condensed Matter, v. 21, n. 4, p. 046007/1-046007/9, 2009Tradução . . Disponível em: http://www.iop.org/EJ/article/0953-8984/21/4/046007/cm9_4_046007.pdf?request-id=5252981f-7f1d-4fe8-a0dd-c645603b856a. Acesso em: 14 maio 2024.

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      ElMassalami, M., Rapp, R. E., Chaves, F. A. B., Moreno, R., Takeya, H., Ouladdiaf, B., et al. (2009). Synthesis and magnetic characterization of of Tm`Co IND.2´`B IND.2´C. Journal of Physics-Condensed Matter, 21( 4), 046007/1-046007/9. Recuperado de http://www.iop.org/EJ/article/0953-8984/21/4/046007/cm9_4_046007.pdf?request-id=5252981f-7f1d-4fe8-a0dd-c645603b856a

    • NLM

      ElMassalami M, Rapp RE, Chaves FAB, Moreno R, Takeya H, Ouladdiaf B, Lynn JW, Huang Q, Freitas RS de, Oliveira Jr. NF. Synthesis and magnetic characterization of of Tm`Co IND.2´`B IND.2´C [Internet]. Journal of Physics-Condensed Matter. 2009 ; 21( 4): 046007/1-046007/9.[citado 2024 maio 14 ] Available from: http://www.iop.org/EJ/article/0953-8984/21/4/046007/cm9_4_046007.pdf?request-id=5252981f-7f1d-4fe8-a0dd-c645603b856a

    • Vancouver

      ElMassalami M, Rapp RE, Chaves FAB, Moreno R, Takeya H, Ouladdiaf B, Lynn JW, Huang Q, Freitas RS de, Oliveira Jr. NF. Synthesis and magnetic characterization of of Tm`Co IND.2´`B IND.2´C [Internet]. Journal of Physics-Condensed Matter. 2009 ; 21( 4): 046007/1-046007/9.[citado 2024 maio 14 ] Available from: http://www.iop.org/EJ/article/0953-8984/21/4/046007/cm9_4_046007.pdf?request-id=5252981f-7f1d-4fe8-a0dd-c645603b856a

  • Artigo de periodico

    The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells (2008)

    Silva, M A T da; Morais, R R O; Dias, I F L; Lourenço, S A; Duarte, J L; Laureto, E; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Subjects: SEMICONDUTORES, ESPALHAMENTO

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    • ABNT

      SILVA, M A T da et al. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells. Journal of Physics-Condensed Matter, v. 20, n. 25, p. 255246/1-255246/9, 2008Tradução . . Disponível em: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d. Acesso em: 14 maio 2024.

    • APA

      Silva, M. A. T. da, Morais, R. R. O., Dias, I. F. L., Lourenço, S. A., Duarte, J. L., Laureto, E., et al. (2008). The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells. Journal of Physics-Condensed Matter, 20( 25), 255246/1-255246/9. Recuperado de http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d

    • NLM

      Silva MAT da, Morais RRO, Dias IFL, Lourenço SA, Duarte JL, Laureto E, Quivy AA, Silva ECF da. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells [Internet]. Journal of Physics-Condensed Matter. 2008 ; 20( 25): 255246/1-255246/9.[citado 2024 maio 14 ] Available from: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d

    • Vancouver

      Silva MAT da, Morais RRO, Dias IFL, Lourenço SA, Duarte JL, Laureto E, Quivy AA, Silva ECF da. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells [Internet]. Journal of Physics-Condensed Matter. 2008 ; 20( 25): 255246/1-255246/9.[citado 2024 maio 14 ] Available from: http://www.iop.org/EJ/article/0953-8984/20/25/255246/cm8_25_255246.pdf?request-id=7151405b-ba22-44aa-98f1-6c2a21951c4d

  • Artigo de periodico

    Magnetic linear dichroism in absorption spectroscopy of EuTe (2008)

    Henriques, André Bohomoletz; Galgano, G D; Abramof, E

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Assunto: SEMICONDUTORES

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      HENRIQUES, André Bohomoletz e GALGANO, G D e ABRAMOF, E. Magnetic linear dichroism in absorption spectroscopy of EuTe. Journal of Physics-Condensed Matter, v. 20, n. 25, p. 255209/1-255209/5, 2008Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/20/25/255209. Acesso em: 14 maio 2024.

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      Henriques, A. B., Galgano, G. D., & Abramof, E. (2008). Magnetic linear dichroism in absorption spectroscopy of EuTe. Journal of Physics-Condensed Matter, 20( 25), 255209/1-255209/5. doi:10.1088/0953-8984/20/25/255209

    • NLM

      Henriques AB, Galgano GD, Abramof E. Magnetic linear dichroism in absorption spectroscopy of EuTe [Internet]. Journal of Physics-Condensed Matter. 2008 ; 20( 25): 255209/1-255209/5.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/20/25/255209

    • Vancouver

      Henriques AB, Galgano GD, Abramof E. Magnetic linear dichroism in absorption spectroscopy of EuTe [Internet]. Journal of Physics-Condensed Matter. 2008 ; 20( 25): 255209/1-255209/5.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/20/25/255209

  • Artigo de periodico

    Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters (2008)

    Larico Mamani, Rolando; Assali, L. V. C. ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco

    Source: Journal of Physics-Condensed Matter. Unidades: IF, EP

    Assunto: SEMICONDUTORES

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      LARICO MAMANI, Rolando et al. Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters. Journal of Physics-Condensed Matter, v. 20, n. 41, p. 415220/1-415220/7, 2008Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/20/41/415220. Acesso em: 14 maio 2024.

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      Larico Mamani, R., Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2008). Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters. Journal of Physics-Condensed Matter, 20( 41), 415220/1-415220/7. doi:10.1088/0953-8984/20/41/415220

    • NLM

      Larico Mamani R, Assali LVC, Machado WVM, Justo Filho JF. Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters [Internet]. Journal of Physics-Condensed Matter. 2008 ; 20( 41): 415220/1-415220/7.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/20/41/415220

    • Vancouver

      Larico Mamani R, Assali LVC, Machado WVM, Justo Filho JF. Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters [Internet]. Journal of Physics-Condensed Matter. 2008 ; 20( 41): 415220/1-415220/7.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/20/41/415220

  • Artigo de periodico

    Dynamic susceptibility measurements at the spin-glass transition in the `Zn IND.1-x´ `Mn IND.x´ `In IND.2´ `Se IND.4´ semiconductor (2007)

    Mantilla, J; Haar, Ewout Ter; Coaquira, J A H; Bindilatti, V.

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Assunto: SEMICONDUTORES

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      MANTILLA, J et al. Dynamic susceptibility measurements at the spin-glass transition in the `Zn IND.1-x´ `Mn IND.x´ `In IND.2´ `Se IND.4´ semiconductor. Journal of Physics-Condensed Matter, v. 19, n. 38, p. 386225/1-386225/8, 2007Tradução . . Disponível em: http://www.iop.org/EJ/article/0953-8984/19/38/386225/cm7_38_386225.pdf?request-id=kvOzPTuD3BGnu00N3Ai7Kg. Acesso em: 14 maio 2024.

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      Mantilla, J., Haar, E. T., Coaquira, J. A. H., & Bindilatti, V. (2007). Dynamic susceptibility measurements at the spin-glass transition in the `Zn IND.1-x´ `Mn IND.x´ `In IND.2´ `Se IND.4´ semiconductor. Journal of Physics-Condensed Matter, 19( 38), 386225/1-386225/8. Recuperado de http://www.iop.org/EJ/article/0953-8984/19/38/386225/cm7_38_386225.pdf?request-id=kvOzPTuD3BGnu00N3Ai7Kg

    • NLM

      Mantilla J, Haar ET, Coaquira JAH, Bindilatti V. Dynamic susceptibility measurements at the spin-glass transition in the `Zn IND.1-x´ `Mn IND.x´ `In IND.2´ `Se IND.4´ semiconductor [Internet]. Journal of Physics-Condensed Matter. 2007 ; 19( 38): 386225/1-386225/8.[citado 2024 maio 14 ] Available from: http://www.iop.org/EJ/article/0953-8984/19/38/386225/cm7_38_386225.pdf?request-id=kvOzPTuD3BGnu00N3Ai7Kg

    • Vancouver

      Mantilla J, Haar ET, Coaquira JAH, Bindilatti V. Dynamic susceptibility measurements at the spin-glass transition in the `Zn IND.1-x´ `Mn IND.x´ `In IND.2´ `Se IND.4´ semiconductor [Internet]. Journal of Physics-Condensed Matter. 2007 ; 19( 38): 386225/1-386225/8.[citado 2024 maio 14 ] Available from: http://www.iop.org/EJ/article/0953-8984/19/38/386225/cm7_38_386225.pdf?request-id=kvOzPTuD3BGnu00N3Ai7Kg

  • Artigo de periodico

    Metal-insulator transition in Nd1-xEuxNiO3 compounds (2006)

    Escote, Márcia Tsuyama; Barbeta, Vagner Bernal; Jardim, R. F.; Campo, J

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, DIFRAÇÃO POR RAIOS X, ESTRUTURA DOS MATERIAIS

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      ESCOTE, Márcia Tsuyama et al. Metal-insulator transition in Nd1-xEuxNiO3 compounds. Journal of Physics-Condensed Matter, v. 18, n. 26, p. 6117-6132, 2006Tradução . . Disponível em: https://doi.org/10.1080/10420159808226393. Acesso em: 14 maio 2024.

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      Escote, M. T., Barbeta, V. B., Jardim, R. F., & Campo, J. (2006). Metal-insulator transition in Nd1-xEuxNiO3 compounds. Journal of Physics-Condensed Matter, 18( 26), 6117-6132. doi:10.1080/10420159808226393

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      Escote MT, Barbeta VB, Jardim RF, Campo J. Metal-insulator transition in Nd1-xEuxNiO3 compounds [Internet]. Journal of Physics-Condensed Matter. 2006 ; 18( 26): 6117-6132.[citado 2024 maio 14 ] Available from: https://doi.org/10.1080/10420159808226393

    • Vancouver

      Escote MT, Barbeta VB, Jardim RF, Campo J. Metal-insulator transition in Nd1-xEuxNiO3 compounds [Internet]. Journal of Physics-Condensed Matter. 2006 ; 18( 26): 6117-6132.[citado 2024 maio 14 ] Available from: https://doi.org/10.1080/10420159808226393

  • Artigo de periodico

    Sharp lines in the absorption edge of EuTe and "Pb IND.0.1" "Eu IND.0.9" Te in high magnetic fields (2004)

    Hanamoto, L K; Henriques, André Bohomoletz; Oliveira Jr., N. F.; Rappl, P; Abramof, E; Ueta, Y

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, ESPECTROSCOPIA ÓPTICA, FOTOLUMINESCÊNCIA

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      HANAMOTO, L K et al. Sharp lines in the absorption edge of EuTe and "Pb IND.0.1" "Eu IND.0.9" Te in high magnetic fields. Journal of Physics-Condensed Matter, v. 16, n. 30, p. 5597-5604, 2004Tradução . . Disponível em: http://ej.iop.org/links/q57/ZSD+paybTVtn2AtTmyicrg/cm4_30_019.pdf. Acesso em: 14 maio 2024.

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      Hanamoto, L. K., Henriques, A. B., Oliveira Jr., N. F., Rappl, P., Abramof, E., & Ueta, Y. (2004). Sharp lines in the absorption edge of EuTe and "Pb IND.0.1" "Eu IND.0.9" Te in high magnetic fields. Journal of Physics-Condensed Matter, 16( 30), 5597-5604. Recuperado de http://ej.iop.org/links/q57/ZSD+paybTVtn2AtTmyicrg/cm4_30_019.pdf

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      Hanamoto LK, Henriques AB, Oliveira Jr. NF, Rappl P, Abramof E, Ueta Y. Sharp lines in the absorption edge of EuTe and "Pb IND.0.1" "Eu IND.0.9" Te in high magnetic fields [Internet]. Journal of Physics-Condensed Matter. 2004 ; 16( 30): 5597-5604.[citado 2024 maio 14 ] Available from: http://ej.iop.org/links/q57/ZSD+paybTVtn2AtTmyicrg/cm4_30_019.pdf

    • Vancouver

      Hanamoto LK, Henriques AB, Oliveira Jr. NF, Rappl P, Abramof E, Ueta Y. Sharp lines in the absorption edge of EuTe and "Pb IND.0.1" "Eu IND.0.9" Te in high magnetic fields [Internet]. Journal of Physics-Condensed Matter. 2004 ; 16( 30): 5597-5604.[citado 2024 maio 14 ] Available from: http://ej.iop.org/links/q57/ZSD+paybTVtn2AtTmyicrg/cm4_30_019.pdf

  • Artigo de periodico

    Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures (2002)

    Rodrigues, S. C. P.; Sipahi, Guilherme Matos; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.

    Source: Journal of Physics-Condensed Matter. Unidades: IFSC, IF

    Assunto: SEMICONDUTORES

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      RODRIGUES, S. C. P. et al. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures. Journal of Physics-Condensed Matter, v. 14, n. 23, p. 5813-5827, 2002Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/14/23/312. Acesso em: 14 maio 2024.

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      Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2002). Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures. Journal of Physics-Condensed Matter, 14( 23), 5813-5827. doi:10.1088/0953-8984/14/23/312

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      Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 23): 5813-5827.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/14/23/312

    • Vancouver

      Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 23): 5813-5827.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/14/23/312

  • Artigo de periodico

    Hyperfine fields at Co clusters in bulk Ag and Cu by a first-principles study: the role of the nearest neighbourhood (2002)

    Nogueira, Renata Nascimento; Petrilli, Helena Maria

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Assunto: RESSONÂNCIA MAGNÉTICA NUCLEAR

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      NOGUEIRA, Renata Nascimento e PETRILLI, Helena Maria. Hyperfine fields at Co clusters in bulk Ag and Cu by a first-principles study: the role of the nearest neighbourhood. Journal of Physics-Condensed Matter, v. 14, n. 5, p. 1067-1073, 2002Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/14/5/311. Acesso em: 14 maio 2024.

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      Nogueira, R. N., & Petrilli, H. M. (2002). Hyperfine fields at Co clusters in bulk Ag and Cu by a first-principles study: the role of the nearest neighbourhood. Journal of Physics-Condensed Matter, 14( 5), 1067-1073. doi:10.1088/0953-8984/14/5/311

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      Nogueira RN, Petrilli HM. Hyperfine fields at Co clusters in bulk Ag and Cu by a first-principles study: the role of the nearest neighbourhood [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 5): 1067-1073.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/14/5/311

    • Vancouver

      Nogueira RN, Petrilli HM. Hyperfine fields at Co clusters in bulk Ag and Cu by a first-principles study: the role of the nearest neighbourhood [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 5): 1067-1073.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/14/5/311

  • Artigo de periodico

    Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon (2002)

    Antonelli, Alex; Justo Filho, João Francisco ; Fazzio, Adalberto

    Source: Journal of Physics-Condensed Matter. Unidades: EP, IF

    Assunto: SEMICONDUTORES

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      ANTONELLI, Alex e JUSTO FILHO, João Francisco e FAZZIO, Adalberto. Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon. Journal of Physics-Condensed Matter, v. 14, n. 48, p. 12761-12765, 2002Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/14/48/314. Acesso em: 14 maio 2024.

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      Antonelli, A., Justo Filho, J. F., & Fazzio, A. (2002). Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon. Journal of Physics-Condensed Matter, 14( 48), 12761-12765. doi:10.1088/0953-8984/14/48/314

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      Antonelli A, Justo Filho JF, Fazzio A. Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 48): 12761-12765.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/14/48/314

    • Vancouver

      Antonelli A, Justo Filho JF, Fazzio A. Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 48): 12761-12765.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/14/48/314

  • Artigo de periodico

    Magnetic properties of hexagonal laves-phase 'Zr-('Cr IND.1-X''Fe IND.X') IND.2' compounds (2001)

    Coaquira, José; Rechenberg, Hercilio Rodolfo

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Subjects: EFEITO MOSSBAUER, MAGNETISMO, FERROMAGNETISMO

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      COAQUIRA, José e RECHENBERG, Hercilio Rodolfo. Magnetic properties of hexagonal laves-phase 'Zr-('Cr IND.1-X''Fe IND.X') IND.2' compounds. Journal of Physics-Condensed Matter, v. 13, n. 36, p. 8415-8434, 2001Tradução . . Disponível em: http://www.iop.org/EJ3-Links/46/GPjO9LEKtnXugppy7vfYRQ/c13614.pdf. Acesso em: 14 maio 2024.

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      Coaquira, J., & Rechenberg, H. R. (2001). Magnetic properties of hexagonal laves-phase 'Zr-('Cr IND.1-X''Fe IND.X') IND.2' compounds. Journal of Physics-Condensed Matter, 13( 36), 8415-8434. Recuperado de http://www.iop.org/EJ3-Links/46/GPjO9LEKtnXugppy7vfYRQ/c13614.pdf

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      Coaquira J, Rechenberg HR. Magnetic properties of hexagonal laves-phase 'Zr-('Cr IND.1-X''Fe IND.X') IND.2' compounds [Internet]. Journal of Physics-Condensed Matter. 2001 ; 13( 36): 8415-8434.[citado 2024 maio 14 ] Available from: http://www.iop.org/EJ3-Links/46/GPjO9LEKtnXugppy7vfYRQ/c13614.pdf

    • Vancouver

      Coaquira J, Rechenberg HR. Magnetic properties of hexagonal laves-phase 'Zr-('Cr IND.1-X''Fe IND.X') IND.2' compounds [Internet]. Journal of Physics-Condensed Matter. 2001 ; 13( 36): 8415-8434.[citado 2024 maio 14 ] Available from: http://www.iop.org/EJ3-Links/46/GPjO9LEKtnXugppy7vfYRQ/c13614.pdf

  • Artigo de periodico

    Raman probing of spatial extents of collective excitations in AlGaAs alloys (2001)

    Pusep, Yuri A.; Sokolov, S S; Fortunato, W; Galzerani, J C; Leite, J. R.

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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      PUSEP, Yuri A. et al. Raman probing of spatial extents of collective excitations in AlGaAs alloys. Journal of Physics-Condensed Matter, v. 13, n. 45, p. 10165-10174, 2001Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/13/45/305. Acesso em: 14 maio 2024.

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      Pusep, Y. A., Sokolov, S. S., Fortunato, W., Galzerani, J. C., & Leite, J. R. (2001). Raman probing of spatial extents of collective excitations in AlGaAs alloys. Journal of Physics-Condensed Matter, 13( 45), 10165-10174. doi:10.1088/0953-8984/13/45/305

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      Pusep YA, Sokolov SS, Fortunato W, Galzerani JC, Leite JR. Raman probing of spatial extents of collective excitations in AlGaAs alloys [Internet]. Journal of Physics-Condensed Matter. 2001 ; 13( 45): 10165-10174.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/13/45/305

    • Vancouver

      Pusep YA, Sokolov SS, Fortunato W, Galzerani JC, Leite JR. Raman probing of spatial extents of collective excitations in AlGaAs alloys [Internet]. Journal of Physics-Condensed Matter. 2001 ; 13( 45): 10165-10174.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/13/45/305

  • Artigo de periodico

    Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.X' 'Ga IND.1-X' N/GaN superlattices (2001)

    Rodrigues, S C P; Sipahi, Guilherme Matos; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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    • ABNT

      RODRIGUES, S C P et al. Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.X' 'Ga IND.1-X' N/GaN superlattices. Journal of Physics-Condensed Matter, v. 13, n. 14, p. 3381-3387, 2001Tradução . . Disponível em: http://www.iop.org/EJ3-Links/35/zzLGssKIC,HW1qAP6barow/c11411.pdf. Acesso em: 14 maio 2024.

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      Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2001). Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.X' 'Ga IND.1-X' N/GaN superlattices. Journal of Physics-Condensed Matter, 13( 14), 3381-3387. Recuperado de http://www.iop.org/EJ3-Links/35/zzLGssKIC,HW1qAP6barow/c11411.pdf

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      Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.X' 'Ga IND.1-X' N/GaN superlattices [Internet]. Journal of Physics-Condensed Matter. 2001 ; 13( 14): 3381-3387.[citado 2024 maio 14 ] Available from: http://www.iop.org/EJ3-Links/35/zzLGssKIC,HW1qAP6barow/c11411.pdf

    • Vancouver

      Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende 'Al IND.X' 'Ga IND.1-X' N/GaN superlattices [Internet]. Journal of Physics-Condensed Matter. 2001 ; 13( 14): 3381-3387.[citado 2024 maio 14 ] Available from: http://www.iop.org/EJ3-Links/35/zzLGssKIC,HW1qAP6barow/c11411.pdf

  • Artigo de periodico

    The effect of a stacking fault on the electronic properties of dopants in gallium arsenide (2000)

    Schmidt, T M; Justo Filho, João Francisco ; Fazzio, Adalberto

    Source: Journal of Physics-Condensed Matter. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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      SCHMIDT, T M e JUSTO FILHO, João Francisco e FAZZIO, Adalberto. The effect of a stacking fault on the electronic properties of dopants in gallium arsenide. Journal of Physics-Condensed Matter, v. 12, n. 49, p. 10235-10239, 2000Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/12/49/323. Acesso em: 14 maio 2024.

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      Schmidt, T. M., Justo Filho, J. F., & Fazzio, A. (2000). The effect of a stacking fault on the electronic properties of dopants in gallium arsenide. Journal of Physics-Condensed Matter, 12( 49), 10235-10239. doi:10.1088/0953-8984/12/49/323

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      Schmidt TM, Justo Filho JF, Fazzio A. The effect of a stacking fault on the electronic properties of dopants in gallium arsenide [Internet]. Journal of Physics-Condensed Matter. 2000 ; 12( 49): 10235-10239.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/12/49/323

    • Vancouver

      Schmidt TM, Justo Filho JF, Fazzio A. The effect of a stacking fault on the electronic properties of dopants in gallium arsenide [Internet]. Journal of Physics-Condensed Matter. 2000 ; 12( 49): 10235-10239.[citado 2024 maio 14 ] Available from: https://doi.org/10.1088/0953-8984/12/49/323

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